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Newcastle University (United Kingdom)
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Newcastle University traces its origins to 1834. It has 4500 staff and 17000 students. The Nano-Materials and Electronics Group is well known for its expertise in: strained Si/SiGe technology for high speed low power integrated circuits; SiC for high temperature high power electronics; nanoscale electrical and physical characterization; ferroelectrics for anoelectronics; biomedical applications for nanoelectronics; reliability of IC interconnects; high-k dielectrics; fabrication; modelling and technology CAD; defect engineering and diffusion; photovoltaics; Microsystems and sensors; nanotechnology.
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www.ncl.ac.uk
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Number of persons working in the Nanoelectronics field:
Main Research activities in Nanoelectronics
- Deposition and rapid thermal processing of thin metal films for formation of intermetallic compounds and silicides.
- Fabrication of ohmic and Schottky contacts on silicon carbide
- Local implantation in patterned silicon and silicon carbide
- Post-implantation structure and surface recovery of silicon carbide
- Oxidation and deposition of high-k dielectrics on silicon and silicon carbide
- RIE patterning of silicon, silicon oxide and silicon carbide
- Sub-nm depth profiling of strain and composition (Si, SiGe)
- Nanoscale strain measurements using TERS with complementary finite element modeling
- Simultaneous evaluation of surface roughness, strain and related defects
- Real-time monitoring of strain/morphology evolution on a nanoscale during thermal processing
- Determining thin epitaxial layer thickness and composition
- Defect identification: misfit dislocations, stacking faults and threading dislocations
- Sub-nm depth profiling for doping/mobility data in Si and strained Si
- TCAD modeling and simulation for validation of device performance
- Ab initio modelling– defects, diffusion, band structure of heavily doped Si, solubility of dopants
- KLMC – extension of length and time scales; dynamical effects
- Analytical gate leakage modeling
- High and low frequency noise measurements
- Techniques to eliminate the impact of leakage in C-V analysis of advanced gate stacks,
- Conventional I-V and C-V analysis
- Interface trap density, conductance technique 3 level charge pumping
- AC conductance measurements for self heating analysis
- Split CV for determining channel mobility
- Electrical characterization at elevated temperature
Research facilities
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Processing:
• More than 200 m2 of fabrication space including 20 m2 Class 100 and 100 m2 Class 1000/10000 clean rooms
• Processing cluster from Oxford Instruments including Plasmalab System 400 magnetron sputter and FlexAL plasma-assisted atomic layer deposition (ALD) tool for ALD and sputter deposition on 8” substrates; ALD module can be configured for thermal or plasma-assisted deposition of a wide range of oxide and nitride materials
• JetFirst bench top rapid thermal processing (RTP) processor for oxidation and annealing wafers up to 200 mm in vacuum and various gases
• Plasma-Therm 790 series reactive ion etching (RIE) machine for processing wafers up to 200 mm
• JIPELEC RTP furnace specified for SiC post-implantation annealing at temperatures up to 2000С
• Two furnaces for oxidation in nitric oxide, dry and wet oxygen
• Edwards coating systems with thermal and e-beam target evaporating
• Two class 100 vertical laminar flow workstations with extraction for wet chemical processing
• Contact photolithography tools and equipment
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Characterization and modelling:
• Climate controlled characterization facilities
• nm resolution Raman spectroscopy, including TERS and thermal measurements
• Combined AFM (resolution>0.01nm)/Raman (resolution>20MPa) mapping
• Conductive AFM, SCM
• Differential Hall
• Ellipsometry
• 4155C Parameter Analyzer with 41501B Pulse Generator extension
• 4294A LCR Bridge
• Thermal chuck attached to probe station
• TCAD and computational modeling
• Finite element strain modeling
• Accurate defect etching
• E8361A PNA Network Analyzer
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Dissemination
Collaboration/projects
Publications/year
Contact
Anthony O'Neill
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