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Today 10/09/2010:
22/08/2010 -> 11/09/2010 23:10 -
ESSON'2010
Request for Joint Processing Platform
E-mail
*
:
Name
*
:
Organisation
*
:
Telephone
*
:
NANOSIL partner # (if that is the case)
:
INFORMATION ABOUT THE WAFERS TO BE PROCESSED
Wafer Size [mm]
:
Pieces
75
100
150
200
Wafer amount
:
Maximum temperature for your wafers [°C]
:
Possible cleanings of your wafers
:
H2SO4:H2O2
RCA1
RCA2
5%HF
Check what materials are intentionally on the wafer surface
:
Si
SiO2
SiN
Metals
Other
WHAT PROCESS STEP WOULD YOU LIKE TO BE PERFORMED?
1- Deposition of
:
to a thickness of (for 1) (in nm)
:
2- Deposition of
:
to a thickness of (for 2) (in nm)
:
3- Deposition of
:
to a thickness of (for 3) (in nm)
:
1- Etching of
:
with a thickness of (for 1) (in nm)
:
2- Etching of
:
with a thickness of (for 2) (in nm)
:
3- Etching of
:
with a thickness of (for 3) (in nm)
:
Oxidation of Si to a thickness of (in nm)
:
Annealing in inert gas
:
for hours
for seconds
Lithography with a resolution of (in nm)
:
I need assistance to make masks for lithography
:
Specify your processing needs in your own words:
:
*
: field required
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