Coordination: 6- IUNET

Contact person: Enrico Sangiorgi, esangiorgi@arces.unibo.it

Participants ID: IUNET, INPG, UCL, ISEN, UPS, TUBS, TYNDALL, WUT, URV, ETHZ, SNPS, GU, LIVUNI, UNEW

The Joint Modelling Platform has been established to continue and further develop the positive experience of the SINANO NoE by integrating and validating the modelling approaches and tools developed by the individual partners against ad-hoc, well-characterized template devices.

The most promising and advances modelling tools-methods are brought together to tackle the main device physical challenges foreseen for the 22 and 16 TN (mobility enhancements, off currents, interface effects, low dimensional transport).

Methods and Tools for Device modelling

Semi-classical device modeling (Boltzmann equation):

o Quantum Drift-Diffusion

o Multi-Sub-Band Monte Carlo

o Deterministic solutions of the Boltzmann Equation

Approaches for different carrier gas dimensionality, corresponding to planar bulk and MUG-MOS (2D) or nanowire FET (1D).

Full-quantum device modeling

o Non Equilibrium Green Functions (NEGF)

o Wigner-Boltzmann

Gate leakage modelling, including high-k materials and trapping

Modeling of intrinsic device parameters variability

Calculation of the sub-band structure for the 2D, 1D, electron and hole carrier gases and of the corresponding scattering rates

o Effective mass approaches

o k.p approaches

Methods and Tools for Compact modelling

Compact models for thin body multi-gate MOSFETs and for FinFETs including size induced quantization and quasi-ballistic transport
Compact models for MASTAR environment

Compact models to account for the main sources of intrinsic statistical variability