Details of the joint publications with Nanosil aknowledgment:
Publication
Workpackage
:
WP1 - More Moore
Type
:
Scientific Journal
Title
:
Analysis of electron mobility in HfO2 /TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge
Title
:
J. Appl. Phys. 105 (2), 024510
Name(s) of participant(s) (conf) and Author(s) (papers)
:
M. A. Negara, K. Cherkaoui, P. K. Hurley, C. D. Young, P. Majhi, W. Tsai, D. Bauza and G. Ghibaudo,