Details of the joint publications with Nanosil aknowledgment:
WP4 - Joint Modelling and Characterisation Platform
A quasi two-dimensional compact drain current model for undoped symmetric double gate MOSFETs including short-channel effects
IEEE Trans. on Electron Devices
Name(s) of participant(s) (conf) and Author(s) (papers)
F. Lime, B. Iniguez, O. Moldovan
Number / period
vol. 55, n° 6, June 2008
A Quasi-Two-Dimensional Compact Drain–Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects
Lime, F. Iniguez, B. Moldovan, O.
Electromagn. et Photonique (IMEP-LAHC), Inst. de Microelectron., Grenoble;
INSPEC Accession Number: 10002736
Digital Object Identifier: 10.1109/TED.2008.921980
Current Version Published: 2008-05-20
A drain-current model for undoped symmetric double-gate MOSFETs is proposed. Channel-length modulation and drain-induced barrier lowering are modeled by using an approximate solution of the 2D Poisson equation. The new model is valid and continuous in linear and saturation regimes, as well as in weak and strong inversions. Excellent agreement was found with Silvaco-ATLAS simulations.