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Consortium area
SINANO INSTITUTE
Public Area

Scientific Publications public

 

  • For the year 2010:

List of scientific publications and participations to conferences in the year 2010:
nanosil_publications_2010.pdf   

  • For the year 2009:

List of scientific publications and participations to conferences in the year 2009:
nanosil_publications_2009.pdf

  • For the year 2008:

- List of scientific publications and participations to conferences in the year 2008:

nanosil_publications_2008.pdf 


  • Details of the joint publications with Nanosil aknowledgment:


Publication
Workpackage  :  WP4 - Joint Modelling and Characterisation Platform
Type  :  Scientific Journal
Title  :  A quasi two-dimensional compact drain current model for undoped symmetric double gate MOSFETs including short-channel effects
Title  :  IEEE Trans. on Electron Devices
Name(s) of participant(s) (conf) and Author(s) (papers)  :  F. Lime, B. Iniguez, O. Moldovan
Number / period  :  vol. 55, n° 6, June 2008
Place  :  Lausanne, Switzerland
Year  :  2008
Relevant pages  :  pp. 1441-1448
Key words  : 
Summary  :  A Quasi-Two-Dimensional Compact Drain–Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects
Lime, F. Iniguez, B. Moldovan, O.
Electromagn. et Photonique (IMEP-LAHC), Inst. de Microelectron., Grenoble;

ISSN: 0018-9383
INSPEC Accession Number: 10002736
Digital Object Identifier: 10.1109/TED.2008.921980
Current Version Published: 2008-05-20

Abstract
A drain-current model for undoped symmetric double-gate MOSFETs is proposed. Channel-length modulation and drain-induced barrier lowering are modeled by using an approximate solution of the 2D Poisson equation. The new model is valid and continuous in linear and saturation regimes, as well as in weak and strong inversions. Excellent agreement was found with Silvaco-ATLAS simulations.
Relative task  :