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Consortium area
SINANO INSTITUTE
Public Area

Scientific Publications public

 

  • For the year 2010:

List of scientific publications and participations to conferences in the year 2010:
nanosil_publications_2010.pdf   

  • For the year 2009:

List of scientific publications and participations to conferences in the year 2009:
nanosil_publications_2009.pdf

  • For the year 2008:

- List of scientific publications and participations to conferences in the year 2008:

nanosil_publications_2008.pdf 


  • Details of the joint publications with Nanosil aknowledgment:


Publication
Workpackage  :  WP4 - Joint Modelling and Characterisation Platform
Type  :  Scientific Journal
Title  :  Experimental and Theoretical Analysis of Hole Transport in Uniaxially Strained pMOSFETs
Title  :  Proc. ESSDERC 2008
Name(s) of participant(s) (conf) and Author(s) (papers)  :  K. Huet, M. Feraille, D. Rideau, R. Delamare, V. Aubry-Fortuna, M. Kasbari, S. Blayac, C. Rivero, A. Bournel, C. Tavernier, P. Dollfus, H. Jaouen
Number / period  :  -
Publisher  :  Institute of Physics
Year  :  2008
Relevant pages  :  pp. 234-237
Key words  : 
Summary  :  Experimental and theoretical analysis of hole transport in uniaxially strained pMOSFETs

Huet, K. Feraille, M. Rideau, D. Delamare, R. Aubry-Fortuna, V. Kasbari, M. Blayac, S. Rivero, C. Bournel, A. Tavernier, C. Dollfus, P. Jaouen, H.
Inst. d'Electron. Fondamentale, Univ. Paris Sud, Orsay;

E-ISBN: 978-1-4244-2364-4
ISSN: 1930-8876
ISBN: 978-1-4244-2363-7
INSPEC Accession Number: 10394848
Digital Object Identifier: 10.1109/ESSDERC.2008.4681741
Current Version Published: 2008-11-18

Abstract
A new wafer bending experiment reports hole mobility variations in pMOS devices with uniaxial stress applied along the <110>, <-110> and <100> directions. Our results have been interpreted using Kubo-Greenwood (KG) formalism. Mobilities were calculated using the usual 3DHG KG formula, but also using a 2DHG calculation. The latter, that accounts for quantum confinement due to the transverse field, is based on a fully self-consistent Poisson-kp-Schrodinger scheme. This 2DHG approach appears to be mandatory for an accurate description of transport properties in strained inversion layers.
Relative task  :