Details of the joint publications with Nanosil aknowledgment:
WP4 - Joint Modelling and Characterisation Platform
Experimental and Theoretical Analysis of Hole Transport in Uniaxially Strained pMOSFETs
Proc. ESSDERC 2008
Name(s) of participant(s) (conf) and Author(s) (papers)
K. Huet, M. Feraille, D. Rideau, R. Delamare, V. Aubry-Fortuna, M. Kasbari, S. Blayac, C. Rivero, A. Bournel, C. Tavernier, P. Dollfus, H. Jaouen
Number / period
Institute of Physics
Experimental and theoretical analysis of hole transport in uniaxially strained pMOSFETs
Huet, K. Feraille, M. Rideau, D. Delamare, R. Aubry-Fortuna, V. Kasbari, M. Blayac, S. Rivero, C. Bournel, A. Tavernier, C. Dollfus, P. Jaouen, H.
Inst. d'Electron. Fondamentale, Univ. Paris Sud, Orsay;
INSPEC Accession Number: 10394848
Digital Object Identifier: 10.1109/ESSDERC.2008.4681741
Current Version Published: 2008-11-18
A new wafer bending experiment reports hole mobility variations in pMOS devices with uniaxial stress applied along the <110>, <-110> and <100> directions. Our results have been interpreted using Kubo-Greenwood (KG) formalism. Mobilities were calculated using the usual 3DHG KG formula, but also using a 2DHG calculation. The latter, that accounts for quantum confinement due to the transverse field, is based on a fully self-consistent Poisson-kp-Schrodinger scheme. This 2DHG approach appears to be mandatory for an accurate description of transport properties in strained inversion layers.