• WP1 "More Moore"
• WP2 "Beyond CMOS"
• WP3 "Joint Processing Platform"
• WP4 "Modelling and Characterization Platform"
• WP5 "Integration and Spreading of Excellence"

Scientific Publications public

• SiNANO BOOK

• For the year 2010:

nanosil_publications_2010.pdf  

• For the year 2009:

nanosil_publications_2009.pdf

• For the year 2008:

nanosil_publications_2008.pdf 

• Details of the joint publications with Nanosil aknowledgment:

WP1 - More Moore

	Date	Title	Author(s)	More info
	2009	TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology	DJ Norris, T Walther, AG Cullis, M Myronov, A Dobbie, T Whall, EHC Parker, DR Leadley, B De Jaeger, W Lee, M Meuris, J Watling and A Asenov
	2009	Strained Si/SiGe MOS technology: improving gate dielectric integrity	SH Olsen, L Yan, R Agaiby, E Escobedo-Cousin, AG O’Neill, PE Hellstrom, M Ostling, K Lyutovich, E Kasper, C Claeys and EHC Parker
	2009	Nanoscale strain characterisation for ultimate CMOS and beyond	SH Olsen, P Dobrosz, RMB Agaiby, YL Tsang, O Alatise, SJ Bull, AG O’Neill, KE Moselund, AM Ionescu, P Majhi, D Buca, S Mantl and H Coulson
	2009	Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs	M. Najmzadeh, L. De Michielis, D. Bouvet, P. Dobrosz, S. Olsen, A.M. Ionescu
	2009	Charging phenomena at the interface between high-k dielectrics and SiOx interlayers	O. Engström, B. Raeissi, J. Piscator, I.Z. Mitrovic, S. Hall, H.D.B. Gottlob, M. Schmidt, P.K. Hurley, K. Cherkaoui
	2009	Analysis of electron mobility in HfO2 /TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge	M. A. Negara, K. Cherkaoui, P. K. Hurley, C. D. Young, P. Majhi, W. Tsai, D. Bauza and G. Ghibaudo,
	2009	Leakage current effects on C-V plots of high-k MOS capacitors	Y. Lu, S. Hall, L. Z. Tan, I. Z. Mitrovic, W. M. Davey, B. Raeissi, O. Engström, K. Cherkaoui, S. Monaghan, P. K. Hurley, H.D.B. Gottlob, M.C. Lemme
	2009	Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics	H.D.B. Gottlob, M. Schmidt, A. Stefani, M.C. Lemme, H. Kurz, I.Z. Mitrovic, W.M. Davey, S. Hall, M. Werner, P.R. Chalker, K. Cherkaoui, P.K. Hurley, J. Piscator, O. Engström
	2009	Nanosil Network of Excellence Silicon-based nanostructures and nanodevices for long-term nanoelectronics applications	F. Balestra, E. Parker , D. Leadley, S. Mantl , E. Dubois, O. Engstrom, R. Clerc, S. Cristoloveanu, H. Kurz, J.P. Raskin, M. Lemme, A. Ionescu , E. Kasper, A. Karmous, M. Baus, B. Spangenberg, M. Ostling, E. Sangiorgi , G. Ghibaudo, D. Flandre
	2009	Optimization of RF performance of valence band-edge metallic S/D junctions in SOI MOSFETs via dopant segregation engineering	R. Valentin, E. Dubois, G. Larrieu, N. Breil, J.P. Raskin, G. Dambrine, F. Danneville
	2009	UHV Fabrication of the Ytterbium Silicide as Potential low Schottky Barrier S/D Contact Material for n-type MOSFET	D. Yarekha, G. Larrieu, N. Breil, E. Dubois, S. Godey, X. Wallart, C. Soyer, D. Remiens, N. Reckinger, X. Tang, A. Laszcz, J. Ratajczak and A. Halimaoui
	2009	Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs	G. Larrieu, D. Yarekha, E. Dubois, N. Breil, N. Reckinger, X. Tang and A. Halimaoui
	2009	Arsenic-Segregated Rare Earth Silicide Junctions: Reduction of Schottky Barrier and Integration in Metallic n-MOSFETs on SOI	G. Larrieu, D. Yarekha, E. Dubois, N. Breil, O. Fainot
	2009	Improved effective mobility extraction in MOSFETs	S.M. Thomas, T.E. Whall, E.H.C. Parker, D.R. Leadley, R.J.P. Lander, G. Vellianitis and J.R. Watling
	2009	Strain sensitivity of gate leakage in strained-SOI nMOSFETs: a benefit for the performance trade-off and a novel way to extract the strain-induced band offset	F. Rochette, X. Garros, G. Reimbold, F. Andrieu, M. Cassé, M. Mouis, G. Ghibaudo and F. Boulanger

WP2 - Beyond CMOS

	Date	Title	Author(s)	More info
	2009	Classification of energy levels in quantum dot structures by means of depleted layer spectroscopy	M.Kaniewska, O. Engström, M. Kaczmarczyk
	2009	Reduced Electric Field in Junctionless Transistors	J.-P. Colinge, C.-W. Lee, I. Ferain, N. Dehdashti Akhavan, R. Yan, P. Razavi, R. Yu, A. N. Nazarov, R. T. Doria
	2009	Investigation of oxidation-induced strain in a top-down Si nanowire platform	M Najmzadeh, D Bouvet, P Dobrosz, SH Olsen and A Ionescu
	2009	Confind energy states in semiconductors detected by a resonant differential capacitance method	O. Engström, M. Kaniewska, M. Krcsmarczyk
	2009	An electrical evaluation method for the silicidation of silicon nanowires	X. Tang, N. Reckinger, V. Bayot, D. Flandre, E. Dubois, D. A. Yarekha, G. Larrieu, A. Lecestre, J. Ratajczak, N. Breil, V. Passi, and J.-P. Raskin
	2009	Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing	N. Reckinger, X. Tang, V. Bayot, D. A. Yarekha, E. Dubois, S. Godey, X. Wallart, G. Larrieu, A. Łaszcz, J. Ratajczak, P. J. Jacques, J.-P. Raskin
	2009	Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs	S. Poli, M.G. Pala, T. Poiroux
	2009	Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs	K. Rogdakis, S. Poli, E. Bano, K. Zekentes, M.G. Pala
	2009	Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs	S. Poli, M.G. Pala
	2009	Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs	M.G. Pala, C. Buran, S. Poli, and M. Mouis

WP3 - Joint Processing Platform

	Date	Title	Author(s)	More info
	2008	Fabrication and characterisation of strained Si heterojunction bipolar transistors on virtual substrates	S. Persson, M. Fjer, E. Escobedo-Cousin, G. Malm, Y.-B. Wang, P.-E. Hellstrom, M. Ostling, E. Parker, L.J. Nash, P. Majhi, S. Olsen, A. O'Neill

WP4 - Joint Modelling and Characterisation Platform

	Date	Title	Author(s)	More info
	2010	Accurate prediction of the volume inversion impact on undoped Double Gate MOSFET capacitances	O. Moldovan, F. A. Chaves, D. Jiménez, J.-P. Raskin and B. Iñiguez
	2009	Non-metallic effects in silicided gate MOSFETs	N.Rodriguez, F.Gamiz, R.Clerc, C.Sampedro, G.Ghibaudo, A.Godoy
	2009	Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation	J. Alvarado, B. Iñiguez, M. Estrada, D. Flandre, A. Cerdeira
	2009	Direct protein detection with a nano-interdigitated array gate MOSFET	X. Tang, A. M. Jonas, B. Nysten, S. Demoustier-Champagne, F. Blondeau, P. Prevot, R. Pampin, E. Godfroid, B. Iñiguez, J. P. Colinge, J. P. Raskin, D. Flandre, V. Bayot
	2009	Mobility Extraction in SOI MOSFETs with sub 1 nm Body Thickness	M. Schmidt, M.C. Lemme, H.D.B. Gottlob, H. Kurz, F. Driussi, L. Selmi
	2009	Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides	T. Rudenko, V. Kilchytska, S. Burignat, J.-P. Raskin, F. Andrieu, O. Faynot, Y. Le Tiec, K. Landry, A. Nazarov, V.S. Lysenko, D. Flandre
	2009	Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel, Solid-State Electronics	S. Burignat, D. Flandre, M.K. Md Arshad, V. Kilchytska, F. Andrieu, O. Faynot and J.-P. Raskin
	2009	A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors	M. Cassé, F. Rochette, L. Thévenod, N. Bhouri, F. Andrieu, G. Reimbold, F. Boulanger, M. Mouis, G. Ghibaudo, D.K. Maude
	2009	Piezoresistance Effect of Strained and Unstrained Fully-Depleted Silicon-On-Insulator MOSFETs Integrating an HfO2/TiN Gate Stack	F. Rochette, M. Cassé, M. Mouis, A. Haziot, T. Pioger, G. Ghibaudo, F. Boulanger
	2009	DC and Low Frequency Noise Characterization of FinFET Devices	K. Bennamane, T. Boutchacha, G. Ghibaudo, M. Mouis, N. Collaert
	2009	Low-temperature characterization and modeling of advanced GeOI pMOSFETs: mobility mechanisms and origin of the parasitic conduction	W. Van Den Daele, E. Augendre, C. Le Royer, J.-F. Damlencourt, B. Grandchamp, S. Cristoloveanu
	2009	Low-temperature measurements on Germanium-on-Insulator pMOSFETs: evaluation of the background doping level and modeling of the threshold voltage dependence	W. Van Den Daele, E. Augendre, K. Romanjek, C. Le Roeyr, L. Clavelier, J–F. Damlencourt, E. Guiot, B. Ghyselen, S. Cristoloveanu
	2009	Floating-body SOI memory: concepts, physics and challenges	M. Bawedin, S. Crisstoloveanu, D. Flandre, F. Udrea
	2009	Ultra compact FDSOI transistors including strain and orientation : processing and performance	C. Fenouillet-Beranger, L. Pham Nguyen, P. Perreau, S. Denorme, F. Andrieu, O. Faynot, L. Tosti, L. Brevard, C. Buj, O. Weber, C. Gallon, V. Fiori, F. Boeuf, S. Cristoloveanu, T. Skotnicki
	2008	Reduced self-heating by strained silicon substrate engineering	A. O'Neill, S. Olsen, Y. Yang, R. Agaiby, P.-E. Hellstrom, M. Ostling, K. Lyutivitch, E. Kasper, G. Enenman, P. Verheyen, R. Loo, C. Claeys, C. Fiegna, E. Sangiorgi
	2008	Strained Si/SiGe MOS technology: improving gate dielectric integrity	S. Olsen, L. Yan, R. Agaiby, E. Escobedo-Cousin, A. O'Neill, P.-E. Hellström, M. Ostling, K. Lyutovich, E. Kasper, C. Claeys, E. Parker
	2008	A quasi two-dimensional compact drain current model for undoped symmetric double gate MOSFETs including short-channel effects	F. Lime, B. Iniguez, O. Moldovan
	2008	Experimental and Theoretical Analysis of Hole Transport in Uniaxially Strained pMOSFETs	K. Huet, M. Feraille, D. Rideau, R. Delamare, V. Aubry-Fortuna, M. Kasbari, S. Blayac, C. Rivero, A. Bournel, C. Tavernier, P. Dollfus, H. Jaouen
	2008	Carrier mobility in undoped triple-gate FinFET structures and limitations of its description in terms of top and sidewall channel mobilities	T. Rudenko, V. Kilchytska, N. collaert, M. Jurczak, A. Nazarov, D. Flandre
	2008	Extraction of n parameter characterizing mueff vs Eeff curves in strained Si nMOS devices	K. Bennamane, M. De Michielis, G. Ghibaudo, D. esseni
	2008	Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxyde semiconductor field effect transistors	K. Huet, D. Querlioz, W. Chaisantikulwat, J. Saint-Martin, A. Bournel, M. Mouis, P. Dollfus

WP5 - Integration and Spread of Excellence

	Date	Title	Author(s)	More info
	No publication

WP6 - Consortium Management

	Date	Title	Author(s)	More info
	No publication