• WP1 "More Moore"
• WP2 "Beyond CMOS"
• WP3 "Joint Processing Platform"
• WP4 "Modelling and Characterization Platform"
• WP5 "Integration and Spreading of Excellence"

Scientific Publications

• For the year 2009:

nanosil_publications_2009.pdf

• For the year 2008:

nanosil_publications_2008.pdf 

• Details of the joint publications with Nanosil aknowledgment:

WP1 - More Moore

	Date	Title	Author(s)	More info
	No publication

WP2 - Beyond CMOS

	Date	Title	Author(s)	More info
	No publication

WP3 - Joint Processing Platform

	Date	Title	Author(s)	More info
	2008	Fabrication and characterisation of strained Si heterojunction bipolar transistors on virtual substrates	S. Persson, M. Fjer, E. Escobedo-Cousin, G. Malm, Y.-B. Wang, P.-E. Hellstrom, M. Ostling, E. Parker, L.J. Nash, P. Majhi, S. Olsen, A. O'Neill

WP4 - Joint Modelling and Characterisation Platform

	Date	Title	Author(s)	More info
	2008	Reduced self-heating by strained silicon substrate engineering	A. O'Neill, S. Olsen, Y. Yang, R. Agaiby, P.-E. Hellstrom, M. Ostling, K. Lyutivitch, E. Kasper, G. Enenman, P. Verheyen, R. Loo, C. Claeys, C. Fiegna, E. Sangiorgi
	2008	Strained Si/SiGe MOS technology: improving gate dielectric integrity	S. Olsen, L. Yan, R. Agaiby, E. Escobedo-Cousin, A. O'Neill, P.-E. Hellström, M. Ostling, K. Lyutovich, E. Kasper, C. Claeys, E. Parker
	2008	A quasi two-dimensional compact drain current model for undoped symmetric double gate MOSFETs including short-channel effects	F. Lime, B. Iniguez, O. Moldovan
	2008	Experimental and Theoretical Analysis of Hole Transport in Uniaxially Strained pMOSFETs	K. Huet, M. Feraille, D. Rideau, R. Delamare, V. Aubry-Fortuna, M. Kasbari, S. Blayac, C. Rivero, A. Bournel, C. Tavernier, P. Dollfus, H. Jaouen
	2008	Carrier mobility in undoped triple-gate FinFET structures and limitations of its description in terms of top and sidewall channel mobilities	T. Rudenko, V. Kilchytska, N. collaert, M. Jurczak, A. Nazarov, D. Flandre
	2008	Extraction of n parameter characterizing mueff vs Eeff curves in strained Si nMOS devices	K. Bennamane, M. De Michielis, G. Ghibaudo, D. esseni
	2008	Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxyde semiconductor field effect transistors	K. Huet, D. Querlioz, W. Chaisantikulwat, J. Saint-Martin, A. Bournel, M. Mouis, P. Dollfus

WP5 - Integration and Spread of Excellence

	Date	Title	Author(s)	More info
	No publication

WP6 - Consortium Management

	Date	Title	Author(s)	More info
	No publication